Damage of light-emitting diodes induced by high reverse-bias stress
نویسندگان
چکیده
The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated.
منابع مشابه
Thin-film Encapsulation of Organic Light-Emitting Diodes Using Single and Multilayer Structures of MgF2, YF3 and ZnS
In this research, the lifetime of green organic light emitting diodes (OLEDs) is studied using four passivation layers. To encapsulate the OLEDs, MgF2, YF3, composed of alternating MgF2/ZnS and YF3/ZnS layers were grown by thermal vacuum deposition. Measurements show that the device lifetime is significantly improved by using YF3 and ZnS as passivation layers. However, diodes encapsulated by Mg...
متن کاملGaN microdisk light emitting diodes
Articles you may be interested in Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Appl. High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes
متن کاملUltraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction
We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic o...
متن کاملElectroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes
This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...
متن کاملElectric-field-induced optical second-harmonic generation in ž / poly phenylene vinylene light-emitting diodes
We demonstrate second-harmonic generation in polymeric light-emitting diodes built in a layer structure of indium tin Ž . oxide, poly phenylene vinylene and aluminum. The second-harmonic intensity generated in the active zone of the diode depends quadratically on the applied reverse bias. In order to account for the bias dependence of the measured intensity a simple model is given in that the s...
متن کامل